EL AMPLIFICADOR DE POTENCIA DE CARGA SINTONIZADA
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ART 2Referencias
Gagliardi R. M. (1978). Introduction to Communication Engineering, John Wiley & Sons.
Moreno J. J. et al. (2012). Development of Singlestage and Doherty GaN-based hybrid RF power amplifiers for quasi-constant envelope
and high peak to average power ratio wireless standards. Microwave and optical technology letters. Vol. 54 No. 1. DOI 10.1002/mop.
Colantonio P. et al., (2009). High Efficiency RF and Microwave solid state power amplifiers. John Wiley & Sons.
Sokal N. O. and Sokal A. D. (1975). Class E – A new class of high-efficiency tuned single ended switching power amplifier. Solid-State
Circuits, IEEE Journal of. Vol. 10, issue 3. DOI 10.1109/JSSC.1975.1050582.
El-Hamamsy S.-A., (1994). Design of high efficiency RF Class-D power amplifier. Power Electronics, IEEE Transactions on. Vol. 9, issue 3. DOI 10.1109/63.311263.
Raab. F. H., (1997). Class-F power amplifiers with maximally flat waveforms. Microwave Theory and Techniques. IEEE Transactions on. Vol.
, issue 11. DOI 10.1109/22.644215.
Cripps S. C., (1999). RF Power Amplifiers for Wireless Communications. Artech House.
Shealy J. et al., (2002). Gallium nitride (GaN) HEMT’s: progress and potential for commercial applications. GaAs IC Symposium, 24th Annual Technical Digest.
Binari S. C. et al., (1997). Fabrication and characterization of GaN FETs. Solid-State Electronics. Vol. 41, issue 10.
CGH40010 Datasheet, Cree Corporation, Rev. 3.1, 2006-2011.
Lu. J. et al., (2008). A new small-signal modeling and extraction method in AlGaN/GaN HEMTs. Solid-State Electronics. Vol 52.
Park H.-C. (2006). High efficiency Class F amplifier design in presence of internal parasitics components of transistor. European Microwave conference.
Pozar D. M., (1998). Microwave Engineering. John Wiley & Sons.
DOI: https://doi.org/10.24054/16927257.v22.n22.2013.404
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